BQ4285EP【PDF 12/31 页】IC RTC W/114X8 NVSRAM 24-DIP

收藏本站

您好，
买卖IC网欢迎您。
请登录
免费注册

买卖IC网

Sheet目录1990

8页 9页 10页 11页 [12页]13页 14页 15页 16页

Block Diagram

standard CMOS SRAM nonvolatile during power-fail

conditions. During power-fail, the bq4285E/L auto-

matically write-protects the external SRAM and pro-

vides a VCC output sourced from the clock backup

battery.

Pin Descriptions

AD0–AD7

Multiplexed address/data input/

output

The bq4285E/L bus cycle consists of two

phases: the address phase and the data-

transfer phase. The address phase precedes

the data-transfer phase.

During the ad-

dress phase, an address placed on AD0–AD7

is latched into the bq4285E/L on the falling

edge of the AS signal.

During the data-

transfer phase of the bus cycle, the AD0–AD7

pins serve as a bidirectional data bus.

MOT

Connect to VSS for normal operation

The setting should not be changed during

system operation. MOT is internally pulled

low by a 20K

resistor. For the DIP and

SOIC packages, this pin is internally con-

nected to VSS, enabling the bus timing for

the Intel architecture.

Chip select input

CS should be driven low and held stable

during the data-transfer phase of a bus cy-

cle accessing the bq4285E/L.

Bus

Type

MOT

Level

Equivalent

R/W

Equivalent

Intel

VSS

RD,

MEMR, or

I/OR

WR,

MEMW, or

I/OW

ALE

Table 1. Bus Setup

bq4285E/L

发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

*型号	*数量	厂商	批号	封装

添加更多采购

采购需求

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

我的联系方式